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TFDU4101
Vishay Semiconductors
Infrared Transceiver Module (SIR, 115.2 kbit/s) for IrDA(R) Applications
Description
The TFDU4101 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 115.2 kbit/s (SIR), and carrier based remote control modes. Integrated within the transceiver module are a photo pin diode, an infrared emitter (IRED), and a low-power control IC to provide a total front-end solution in a single package. This device covers the full IrDA range of more than 1 m using the internal intensity control. With one external current control resistor the current can be adjusted for shorter ranges saving operating current operating in IrDA low power mode. This Vishay SIR transceiver is using the lead frame technology. The receiver output pulse duration is independent of
20110
the optical input pulse duration and recovers always a fixed pulse duration optimum for compatibility to standard Endecs and interfaces. TFDU4101 has a tristate output and is floating in shutdown mode with a weak pull-up.
Features
* Operates from 2.4 V to 5.5 V within specification over full temperature range from - 30 C to + 85 C e3 * Split power supply, transmitter and receiver can be operated from two power supplies with relaxed requirements saving costs, US - Patent No. 6,157,476 * Low power consumption (< 0.12 mA supply current in receive mode, no signal) * Power shutdown mode (< 4 A shutdown current in full temperature range, up to 85 C, < 10 nA at 25 C) * Surface mount 4-mm package L 9.7 mm x W 4.7 mm x H 4.0 mm * High efficiency emitter * Low profile (universal) package capable of surface mount soldering to side and top view orientation * Directly Interfaces with various super I/O and controller devices as e. g. TOIM4232 * Tri-state-receiver output, floating in shut down with a weak pull-up * Lead (Pb)-free device * Qualified for lead (Pb)-free and Sn/Pb processing (MSL4) * Device in accordance with RoHS 2002/95/EC and WEEE 2002/96EC
Applications
* Printers, fax machines, photocopiers, screen projectors * Internet TV boxes, video conferencing systems * Medical data collection * Diagnostic systems * Notebook computers, desktop PCs, palmtop computers (Win CE, Palm PC), PDAs * * * * * * Internet TV boxes, video conferencing systems External infrared adapters (dongles) Data loggers GPS Kiosks, POS, point and pay devices Industrial applications
Parts Table
Part TFDU4101-TR3 TFDU4101-TT3 Document Number 81288 Rev. 1.2, 04-Dec-07 Description Oriented in carrier tape for side view surface mounting Oriented in carrier tape for top view surface mounting Qty/reel 1000 pcs 1000 pcs www.vishay.com 1
TFDU4101
Vishay Semiconductors Functional Block Diagram
VCC1 Tri-State Driver Amplifier Comparator VCC2 RXD
SD TXD
18468
Logic and
Control
Controlled Driver IRED C
GND
Pin Description
Pin number Function Description I/O Active IRED anode to be externally connected to VCC2. An external resistor is only necessary for controlling the IRED current when a current reduction below VCC2 300 mA is intended to operate in IrDA low power mode. IRED Anode This pin is allowed to be supplied from an uncontrolled power supply separated from the controlled VCC1 - supply. IRED Cathode TXD IRED cathode, internally connected to driver transistor This Schmitt-Trigger input is used to transmit serial data when SD is low. An on-chip protection circuit disables the LED driver if the TXD pin is asserted for longer than 50 s (max 300 s). Received Data Output, push-pull CMOS driver output capable of driving standard CMOS or TTL loads. During transmission the RXD output is active (echo-on). No external pull-up or pull-down resistor is required. Floating with a weak pull-up of 500 k (typ.) in shutdown mode. Shutdown Supply Voltage No internal connection Ground I I High
1
2 3
4 5 6 7 8
RXD SD VCC1 NC GND
O I
Low High
Pinout
TFDU4101 weight 200 mg
"U" Option BabyFace (Universal)
IRED Detector
1
17087
2 34 56
78
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Absolute Maximum Ratings
Reference point pin, GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supply voltage range, transceiver Supply voltage range, transmitter Voltage at RXD Voltage at all inputs and outputs Input currents Output sinking current Power dissipation Junction temperature Ambient temperature range (operating) Storage temperature range Soldering temperature Average output current, pin 1 Repetitive pulse output current, pin 1 to pin 2 < 90 s, ton < 20 % See "Recommended Solder Profile" IIRED (DC) IIRED (RP) See derating curve PD TJ Tamb Tstg - 30 - 30 Test conditions - 0.3 V < VCC2 < 6.0 V - 0.5 V < VCC1 < 6.0 V - 0.5 V < VCC1 < 6.0 V Vin > VCC1 is allowed For all pins, except IRED anode pin Symbol VCC1 VCC2 VRXD Vin Min. - 0.5 - 0.5 - 0.5 - 0.5 Typ. Max. 6.0 6.0 VCC1 + 0.5 6.0 10 25 250 125 + 85 + 85 260 80 400 Unit V V V V mA mA mW C C C C mA mA
Eye safety information
Reference point pin: GND unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Virtual source size Maximum Intensity for Class 1 Test conditions Method: EN ISO 11146 IEC60825-1 or EN60825-1, edition Jan. 2001 operating below the absolute maximum ratings Symbol d Ie Min. 2.6
*)
Typ.
Max.
Unit mm
(500)**)
mW/sr
Notes: *) Due to the internal limitation measures the device is a "class1" device under all conditions
**)
IrDA specifies the max. intensity with 500 mW/sr
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy: 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with the physical layer standard IrPhy 1.1, followed by IrPhy 1.2, adding the SIR low power standard. IrPhy 1.3 extended the low power option to MIR and FIR and VFIR was added with IrPhy 1.4. A new version of the standard in any case obsoletes the former version. Note: We apologize to use sometimes in our documentation the abbreviation LED and the word light emitting diode instead of infrared emitting diode (IRED) for IR-emitters. That is by definition wrong; we are here following just a bad trend. Typical values are for design aid only, not guaranteed nor subject to production testing and may vary with time.
Document Number 81288 Rev. 1.2, 04-Dec-07
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TFDU4101
Vishay Semiconductors Electrical Characteristics Transceiver
Tamb = 25 C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Supply voltage Dynamic supply current SD = Low, Ee = 1 Tamb = - 25 C to + 85 C VCC1 = VCC2 = 2.4 V to 5.5 V SD = Low, Ee = 1 klx*), Tamb = 25 C VCC1 = VCC2 = 2.4 V to 5.5 V IIRED = 300 mA, 25 % Duty Cycle SD = High, T = 25 C, Ee = 0 klx No signal, no resistive load Shutdown supply current SD = High, T = 70 C No signal, no resistive load SD = High, T = 85 C No signal, no resistive load Operating temperature range Output voltage Low, RXD Output voltage High, RXD RXD to VCC1 impedance Input voltage low (TXD, SD) Input voltage High (TXD, SD) Input leakage current (TXD, SD) Controlled pull down current 0 < Vin < 0.15 VCC1 Vin > 0.7 VCC1 Input capacitance (TXD, SD)
*)
Test conditions/pins klx*),
Symbol VCC1 ICC1
Min. 2.4
Typ.
Max. 5.5
Unit V A
90
130
Dynamic supply current Average dynamic supply current, transmitting
ICC1
75
A
ICC ISD ISD ISD TA - 30 - 0.5 0.8 x VCC1 0.9 x VCC1 400 - 0.5 0.8 x VCC1 VCC1 - 0.5 -2 500
0.65 0.1 3 4 + 85 0.15 x VCC1 VCC1 + 0.5 VCC1 + 0.5 600 0.5 6 6 +2 + 150 1 5
mA A A A C V V V k V V V A A A pF
Cload = 15 pF IOH = - 500 A, CLoad = 15 pF IOH = - 250 A, CLoad = 15 pF
VOL VOH VOH RRXD VIL
1.5 V Vlogic 2.5 Vlogic > 2.5
V**)
VIH VIH IICH IIrTX
V**)
Vin = 0.9 x VCC1 SD, TXD = "0" or "1"
-1 CI
0
Standard Illuminant A The typical threshold level is 0.5 x VCC1. It is recommended to use the specified min./max. values to avoid increased operating current.
**)
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Optoelectronic Characteristics Receiver
Tamb = 25 C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter Minimum irradiance Ee in angular range**) SIR mode Maximum irradiance Ee in angular range Rise time of output signal Fall time of output signal RXD pulse width Leading edge jitter Standby/shutdown delay, receiver startup time Latency Notes:
*)
Test conditions 9.6 kbit/s to 115.2 kbit/s = 850 nm to 900 nm; = 0, 15 = 850 nm to 900 nm 10 % to 90 %, CL = 15 pF 90 % to 10 %, CL = 15 pF input pulse length > 1.2 s Input Irradiance = 100 mW/m2, 115.2 kbit/s After shutdown active or power-on
Symbol Ee, min. Ee, max. tr (RXD) tf (RXD) tPW
Min. 4 (0.4) 5 (500) 20 20 1.65
Typ. 20 (2)
Max. 35*) (3.5)
Unit mW/m2 (W/cm2) kW/m2 (mW/cm2)
100 100 2.2 3.0 250
ns ns s ns
500 tL 100 150
s s
IrDA specification is 40 mW/m2. Specification takes a window loss of 10 % into account.
e in angular range, power per unit area. The receiver must meet the BER specification while the source is operating at the minimum intensity in angular range into the minimum half-angle range at the maximum link length ***)
**) IrDA sensitivity definition: Minimum irradiance E
Maximum irradiance Ee in angular range, power per unit area. The optical power delivered to the detector by a source operating at the maximum intensity in angular range at minimum link length must not cause receiver overdrive distortion and possible related link errors. If placed at the Active Output Interface reference plane of the transmitter, the receiver must meet its bit error ratio (BER) specification. For more definitions see the document "Symbols and Terminology" on the Vishay Website (http://www.vishay.com/docs/82512/82512.pdf).
Document Number 81288 Rev. 1.2, 04-Dec-07
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TFDU4101
Vishay Semiconductors Optoelectronic Characteristics, continued Transmitter
Tamb = 25 C, VCC1 =VCC2 = 2.4 V to 5.5 V unless otherwise noted. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Parameter IRED operating current, switched current limiter Forward voltage of built-in IRED Output leakage IRED current Output radiant intensity = 0, 15 TXD = High, SD = Low VCC1 = 5.0 V, = 0, 15 TXD = Low or SD = High (Receiver is inactive as long as SD = High) Test conditions No external resistor for current limitation*) If = 300 mA Symbol ID Vf IIRED Ie Ie p tropt, tfopt input pulse width 1.6 s < tTXD < 20 s input pulse width tTXD 20 s topt topt 10 tTXD - 0.15 20 880 45 300 tTXD + 0.15 300 25 24 900 Min. 250 1.4 -1 48 65 Typ. 300 1.8 Max. 350 1.9 1 Unit mA V A mW/sr
Output radiant intensity Output radiant intensity, angle of half intensity Peak - emission wavelength**) Spectral bandwidth Optical rise time, Optical fall time Optical output pulse duration Optical output pulse duration Optical overshoot Notes:
*)
0.04
mW/sr
deg nm nm ns s s %
Using an external current limiting resistor is allowed and recommended to reduce IRED intensity and operating current when current reduction is intended to operate at the IrDA low power conditions. E.g. for VCC2 = 3.3 V a current limiting resistor of Rs = 56 will allow a power minimized operation at IrDA low power conditions.
**)
Due to this wavelength restriction compared to the IrDA spec of 850 nm to 900 nm the transmitter is able to operate as source for the standard remote control applications with codes as e. g. Philips RC5/RC6(R) or RECS 80.
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Recommended Circuit Diagram
Operated with a clean low impedance power supply the TFDU4101 needs no additional external components. However, depending on the entire system design and board layout, additional components may be required (see figure 1). That is especially the case when separate power supplies are used for bench tests. When using compact wiring and regulated supplies as e. g. in phone applications in most cases no external components are necessary. The inputs (TXD, SD) and the output RXD should be directly connected (DC - coupled) to the I/O circuit. The capacitor C2 combined with the resistor R2 is the low pass filter for smoothing the supply voltage. R2, C1 and C2 are optional and dependent on the quality of the supply voltages VCC1 and injected noise. An unstable power supply with dropping voltage during transmission may reduce the sensitivity (and transmission range) of the transceiver. The placement of these parts is critical. It is strongly recommended to position C2 as close as possible to the transceiver power supply pins. When extended wiring is used (bench tests!) the inductance of the power supply can cause dynamically a voltage drop at VCC2. Often some power supplies are not able to follow the fast current rise time. In that case another 4.7 F (type, see table under C1) at VCC2 will be helpful. Under extreme EMI conditions as placing an RF-transmitter antenna on top of the transceiver, we recommend to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the RXD port. The transceiver itself withstands EMI at GSM frequencies above 500 V/m. When interference is observed, the wiring to the inputs picks it up. It is verified by DPI measurements that as long as the interfering RF - voltage is below the logic threshold levels of the inputs and equivalent levels at the outputs no interferences are expected. One should keep in mind that basic RF - design rules for circuit design should be taken into account. Especially longer signal lines should not be used without termination. See e.g. "The Art of Electronics" Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957.
VIRED VCC GND
C1
R1 *) R2 C2
VCC2 , IRED A VCC1 Ground
SD TXD RXD
20037
SD TXD RXD IRED C
Figure 1. Recommended Test Circuit. *) R1 is optional when reduced intensity is used.
The capacitor C1 is buffering the supply voltage and eliminates the inductance of the power supply line. This one should be a Tantalum or other fast capacitor to guarantee the fast rise time of the IRED current. The resistor R1 is the current limiting resistor, which may be used to reduce the operating current to levels below the specified controlled values for saving battery power. VISHAY's transceivers integrate a sensitive receiver and a built-in power driver. The combination of both needs a careful circuit board layout. The use of thin, long, resistive and inductive wiring should be avoided. The shutdown input must be grounded for normal operation, also when the shutdown function is not used.
Table 1. Recommended Tests and Application Circuit Components
Component C1 C2 R1 R2 Recommended value 4.7 F, 16 V 0.1 F, Ceramic 47 , 0.125 W Vishay part number 293D 475X9 016B VJ 1206 Y 104 J XXMT CRCW-1206-47R0-F-RT1
depends on current to be adjusted, e. g. with VCC2 = 3.3 V 56 is an option for minimum low power operation
Document Number 81288 Rev. 1.2, 04-Dec-07
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TFDU4101
Vishay Semiconductors
Figure 2 shows an example of a typical application with a separate supply voltage VS and using the transceiver with the IRED Anode connected to the unregulated battery Vbatt. This method reduces the peak load of the regulated power supply and saves therefore costs. Alternatively all supplies can also be tied to only one voltage source. R1 and C1 are not used in this case and are depending on the circuit design in most cases not necessary. In figure 2 an option is shown to operate the transmitter at two different power levels to switch for long range to low power mode for e.g. saving power for IrDA application but use the full range specification for remote control. The additional components are marked in the figure. For operating at RS232 ports TOIM4232 is recommended as ENDEC. I/O and Software In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available from the I/O suppliers. In special cases refer to the I/O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application.
Current Derating Diagram
Figure 3 shows the maximum operating temperature when the device is operated without external current limiting resistor.
90
Ambient Temperature (C )
85 80 75 70 65 60 55 50 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Vbatt 3 V Hi/Low Vs = 2.8 V
R1
C1
Vdd
IRTX IRRX IR MODE
R2 C2
IRED Anode (1) IRED Cathode (2) TXD (3) RXD (4) SD (5) Vcc1 (6) GND (8)
20038
18097
Operating Voltage (V) at duty cycle 20 %
Figure 3. Current Derating Diagram Figure 2. Typical Application Circuit. Grey: Optional for Hi/Low Switching.
Table 2. Truth table
Inputs SD high > 1 ms TXD x high < 50 s high > 50 s low low low low > Min. irradiance Ee < Max. irradiance Ee > Max. irradiance Ee low (active) undefined 0 0 Optical input Irradiance mW/m2 x x x <4 RXD weakly pulled (500 k) to VCC1 low active high inactive high inactive Outputs Transmitter 0 Ie 0 0 Remark Operation Shutdown Transmitting Protection is active Ignoring low signals below the IrDA defined threshold for noise immunity Response to an IrDA compliant optical input signal Overload conditions can cause unexpected outputs
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Recommended Solder Profiles
Solder Profile for Sn/Pb Soldering Storage The storage and drying processes for all VISHAY transceivers (TFDUxxxx and TFBSxxx) are equivalent to MSL4. The data for the drying procedure is given on labels on the packing and also in the application note "Taping, Labeling, Storage and Packing" (http://www.vishay.com/docs/82601/82601.pdf).
260 240 220 200 180 160 140 120 100 80 60 40 20 0
19535
10 s max. at 230 C 240 C max. 2...4 C/s 160 C max. 120 s...180 s
Temperature (C)
90 s max.
2...4 C/s 275 250 225 0 50 100 150 Time/s Temperature/C 200 250 300 350 200 175 150 125 100 75 50 25 0 0
19532
T 255 C for 10 s....30 s T 217 C for 70 s max
Tpeak = 260 C
Figure 4. Recommended Solder Profile for Sn/Pb Soldering
30 s max. 90 s...120 s 70 s max. 2 C...4 C/s 2 C...3 C/s
Lead (Pb)-Free, Recommended Solder Profile The TFDU4101 is a lead (Pb)-free transceiver and qualified for lead (Pb)-free processing. For lead (Pb)-free solder paste like Sn (3.0 - 4.0) Ag (0.5 - 0.9) Cu, there are two standard reflow profiles: RampSoak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 5 and 6 are VISHAY's recommended profiles for use with the TFDU4101 transceivers. For more details please refer to the application note "SMD Assembly Instructions" (http://www.vishay.com/docs/82602/82602.pdf). A ramp-up rate less than 0.9 C/s is not recommended. Ramp-up rates faster than 1.3 C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. Wave Soldering For TFDUxxxx and TFBSxxxx transceiver devices wave soldering is not recommended. Manual Soldering Manual soldering is the standard method for lab use. However, for a production process it cannot be recommended because the risk of damage is highly dependent on the experience of the operator. Nevertheless, we added a chapter to the above mentioned application note, describing manual soldering and desoldering.
Document Number 81288 Rev. 1.2, 04-Dec-07
50
100
150 200 Time/s
250
300
350
Figure 5. Solder Profile, RSS Recommendation
280 260 240 220 200 180
Temperature/C
Tpeak = 260 C max
< 4 C/s 1.3 C/s
160 140 120 100 80 60 40 20 0 0 50
Time above 217 C t 70 s Time above 250 C t 40 s Peak temperature Tpeak = 260 C
< 2 C/s
100
150 Time/s
200
250
300
Figure 6. RTS Recommendation
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TFDU4101
Vishay Semiconductors Package Dimensions in mm
7x1=7 0.6
2.5 1 1 8
18470
Figure 7. Package Drawing TFDU6103, Tolerance 0.2 mm if not otherwise mentioned
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors
20035
Figure 8. Recommended Footprint for Side View Applications and Solderpaste Mask
20036
Figure 9. Recommended Footprint for Top View Applications and Solderpaste Mask
Document Number 81288 Rev. 1.2, 04-Dec-07
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TFDU4101
Vishay Semiconductors Reel Dimensions in mm
Drawing-No.: 9.800-5090.01-4 Issue: 1; 29.11.05
14017
Tape width mm 24
A max. mm 330
N mm 60
W1 min. mm 24.4
W2 max. mm 30.4
W3 min. mm 23.9
W3 max. mm 27.4
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Tape Dimensions in mm
Drawing-No.: 9.700-5251.01-4 Issue: 3; 02.09.05
19824
Figure 10. Tape Drawing, TFDU6103 for Top View Mounting, Tolerance 0.1 mm
Document Number 81288 Rev. 1.2, 04-Dec-07
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TFDU4101
Vishay Semiconductors Tape Dimensions in mm
19875
Figure 11. Tape Drawing, TFDU6103 for Side View Mounting, Tolerance 0.1 mm
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Document Number 81288 Rev. 1.2, 04-Dec-07
TFDU4101
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81288 Rev. 1.2, 04-Dec-07
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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